Pathways of nitric oxide dissociation on Si(001) and subsequent atomistic processes: a first-principles molecular dynamics study
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
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1. High-field-induced degradation in ultra-thin SiO/sub 2/ films
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1. Pathways of NO adsorption on Si(100)2×1 by van der Waals corrected DFT;Journal of Theoretical and Computational Chemistry;2017-03
2. Early stage oxynitridation process of Si(001) surface by NO gas: Reactive molecular dynamics simulation study;Journal of Applied Physics;2016-03-28
3. Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2013-12-01
4. Reaction Kinetics in the Rapid Oxide Growth on Si(001)-(2×1) Probed with Reflectance Difference Spectroscopy;Japanese Journal of Applied Physics;2010-05-20
5. First-principles study of oxygen adsorption on the nitrogen-passivated4H-SiC (0001) silicon face;Physical Review B;2009-08-31
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