First-principles study of oxygen adsorption on the nitrogen-passivated4H-SiC (0001) silicon face
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.80.085318/fulltext
Reference43 articles.
1. Formation of nitride layers on 6H-SiC surfaces
2. 4H-SiC oxynitridation for generation of insulating layers
3. Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen
4. Interface trap profile near the band edges at the 4H-SiC/SiO2 interface
5. Interfacial Defects in SiO2Revealed by Photon Stimulated Tunneling of Electrons
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3. Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study;Chinese Physics B;2017-03
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