Study on Al2O3/Ge interface formed by ALD directly on epitaxial Ge
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaec51/pdf
Reference19 articles.
1. Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
2. An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition
3. Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
4. Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks
5. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation
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1. Nitrogen-vacancy defects in germanium;AIP Advances;2022-04-01
2. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers;ACS Applied Materials & Interfaces;2020-05-08
3. Germanium Twin-Transistor Nonvolatile Memory With FinFET Structure;IEEE Journal of the Electron Devices Society;2020
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