Valence and conduction band offsets for sputtered AZO and ITO on (010) (Al0.14Ga0.86)2O3
Author:
Funder
Defense Threat Reduction Agency
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6641/aaf8d7/pdf
Reference53 articles.
1. Ga2O3 Schottky barrier and heterojunction diodes for power electronics applications
2. A review of Ga2O3materials, processing, and devices
3. Guest Editorial: The dawn of gallium oxide microelectronics
4. Recent progress in Ga2O3power devices
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Moderate temperature deposition of RF magnetron sputtered SnO2-based electron transporting layer for triple cation perovskite solar cells;Scientific Reports;2023-06-05
2. Effect of nitrogen partial pressure on the piezoresistivity of magnetron sputtered ITO thin films at high temperatures;Applied Surface Science;2023-01
3. Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs;IEEE Transactions on Power Electronics;2020-05
4. Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74;Journal of Applied Physics;2020-03-14
5. Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials;Journal of Semiconductors;2019-12-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3