Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25

Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74

Published:2020-03-14 Issue:10 Volume:127 Page:105701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fares Chaker¹^ORCID,Xian Minghan¹,Smith David J.²,McCartney Martha R.²,Kneiß Max³^ORCID,von Wenckstern Holger³^ORCID,Grundmann Marius³^ORCID,Tadjer Marko⁴,Ren Fan¹^ORCID,Pearton S. J.⁵^ORCID

Affiliation:

1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA

2. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

3. Universität Leipzig, Felix-Bloch-Institut für Festkörperphysik, 04103 Leipzig, Germany

4. U.S. Naval Research Laboratory, Washington, DC 20375, USA

5. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA

Funder

Defense Threat Reduction Agency

Office of Naval Research

Division of Materials Research

European Social Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0002875

Reference57 articles.

1. Group-III Sesquioxides: Growth, Physical Properties and Devices

2. H. von Wenckstern, Gallium Oxide (Elsevier, 2019), pp. 119–148.

3. Ultraviolet detectors based on (GaIn)_2O_3 films

4. Visible-blind and solar-blind ultraviolet photodiodes based on (InxGa1−x)2O3

5. Sol-gel prepared (Ga1−xInx)2O3 thin films for solar-blind ultraviolet photodetectors

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