Impact of wet-oxidized Al2O3/AlGaN interface on AlGaN/GaN 2-DEGs
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/32/i=4/a=04LT02/pdf
Reference26 articles.
1. High-power AlGaN/GaN HEMTs for Ka-band applications
2. High-power SiO2∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors
3. GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric
4. Investigations of HfO2∕AlGaN∕GaN metal-oxide-semiconductor high electron mobility transistors
5. ZrO[sub 2] gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors
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3. Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs;Applied Surface Science;2019-07
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