Evolution of field dependent carrier trapping during off-state degradation for GaN based metal oxide semiconductor high electron mobility transistors
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5044590
Reference27 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. On the origin of the two-dimensional electron gas at the AlGaN∕GaN heterostructure interface
3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers
4. High-performance E-mode AlGaN/GaN HEMTs
5. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
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1. Effect of width scaling on RF and DC performance of AlGaN/GaN-based Ku-band multi-finger 250 nm high electron mobility transistor technology;Solid-State Electronics;2021-12
2. Off-State Degradation and Recovery in Oxide/AlGaN/GaN Heterointerfaces: Importance of Band Offset, Electron, and Hole Trapping;ACS Applied Electronic Materials;2020-06-23
3. Multi-Finger High Power Gallium Nitride Based High Electron Mobility Transistors;2019 6th International Conference on Electrical and Electronics Engineering (ICEEE);2019-04
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