Simulation supported analysis of the effect of SiNxinterlayers in AlGaN on the dislocation density reduction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/209/i=1/a=012018/pdf
Reference14 articles.
1. TEM analysis of threading dislocations in crack‐free Al x Ga 1− x N grown on an AlN(0001) template
2. Structural and spectroscopic properties of AlN layers grown by MOVPE
3. Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates
4. Anti-Surfactant in III-Nitride Epitaxy -- Quantum Dot Formation and Dislocation Termination --
5. Process optimization for the effective reduction of threading dislocations in MOVPE grown GaN using in situ deposited masks
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3. Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation;Journal of Crystal Growth;2017-06
4. Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices;Japanese Journal of Applied Physics;2016-04-18
5. Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy;AIP Advances;2016-04
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