Structural and spectroscopic properties of AlN layers grown by MOVPE-Reference-Cited by-同舟云学术

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Structural and spectroscopic properties of AlN layers grown by MOVPE

Published:2007-01 Issue: Volume:298 Page:383-386
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thapa S.B.,Kirchner C.,Scholz F.,Prinz G.M.,Thonke K.,Sauer R.,Chuvilin A.,Biskupek J.,Kaiser U.,Hofstetter D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. AlN/diamond heterojunction diodes

2. AlN/AlGaInN superlattice light-emitting diodes at 280 nm

3. Field emission properties of heavily Si-doped AlN in triode-type display structure

4. GaN/AlN-based quantum-well infrared photodetector for 1.55 μm

5. Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

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1. A numerical study of the effect of pulse duration on preventing particle generation during the AlN pulsed MOCVD process;Materials Science in Semiconductor Processing;2022-09

2. Ab initio studies of structural, electronic and magnetic properties of Al1-xMnxN in zinc blende structure;Computational Condensed Matter;2021-03

3. Study of crystalline defect induced optical scattering loss inside photonic waveguides in UV–visible spectral wavelengths using volume current method;Optics Express;2019-06-05

4. Structural characterization of Al 0.55 Ga 0.45 N epitaxial layer determined by high resolution x-ray diffraction and transmission electron microscopy;Chinese Physics B;2017-04

5. Structural and optical properties of Al x Ga 1−x N (0.33 ≤ x ≤ 0.79) layers on high-temperature AlN interlayer grown by metal organic chemical vapor deposition;Superlattices and Microstructures;2017-01

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