Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation-Reference-Cited by-同舟云学术

Observation of reaction between a-type dislocations in GaN layer grown on 4-in. Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation

Published:2017-06 Issue: Volume:468 Page:536-540
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Sugawara Yoshihiro,Ishikawa Yukari,Watanabe Arata,Miyoshi Makoto,Egawa Takashi

Funder

Japan Science and Technology Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Gallium nitride based power switches for next generation of power conversion

2. AlGaN devices and growth of device structures

3. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

4. Sixteen years GaN on Si

5. Epitaxial challenges of GaN on silicon

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