Author:
Seredin P. V.,Goloshchapov D. L.,Zolotukhin D. S.,Lenshin A. S.,Khudyakov Yu. Yu.,Mizerov A. M.,Timoshnev S. N.,Arsentyev I. N.,Beltyukov A. N.,Leiste Harald,Kukushkin S. A.
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference37 articles.
1. B. J. Baliga, Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications (Woodhead, Cambridge, MA, 2019).
2. M. E. Levinshtein, S. L. Rumyantsev, and M. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001).
3. S. Leone, F. Benkhelifa, L. Kirste, C. Manz, R. Quay, and O. Ambacher, J. Appl. Phys. 125, 235701 (2019). https://doi.org/10.1063/1.5092653
4. G. X. Chen, X. G. Li, Y. P. Wang, J. N. Fry, and H. P. Cheng, Phys. Rev. B 95, 045302 (2017). https://doi.org/10.1103/PhysRevB.95.045302
5. J. T. Chen, J. Bergsten, J. Lu, E. Janzén, M. Thorsell, L. Hultman, N. Rorsman, and O. Kordina, Appl. Phys. Lett. 113, 041605 (2018). https://doi.org/10.1063/1.5042049
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献