Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si-Reference-Cited by-同舟云学术

Epitaxial growth optimization of AlGaN/GaN high electron mobility transistor structures on 3C-SiC/Si

Published:2019-06-21 Issue:23 Volume:125 Page:235701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Leone Stefano¹^ORCID,Benkhelifa Fouad¹,Kirste Lutz¹,Manz Christian¹,Quay Ruediger¹,Ambacher Oliver¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastr. 72, 79108 Freiburg, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5092653

Reference41 articles.

1. R. Quay, P. Bruckner, A. Tessmann, E. Ture, D. Schwantuschke, M. Dammann, and P. Waltereit, in Proceedings of INMMiC, Graz, Austria (IEEE, 2017), p. 1.

2. Cubic GaN/AlN multi-quantum wells grown on pre-patterned 3C-SiC/Si (001)

3. Growth of cubic GaN on 3C–SiC/Si (001) nanostructures

4. Effects of SiC buffer layer growth temperature on the residual strain of GaN/SiC/Si thin films

5. Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111)

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