Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy-Reference-Cited by-同舟云学术

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Published:2016-04 Issue:4 Volume:6 Page:045020
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sugawara Yoshihiro,Ishikawa Yukari^ORCID,Watanabe Arata,Miyoshi Makoto,Egawa Takashi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4948451

Reference31 articles.

1. Gallium nitride based power switches for next generation of power conversion

2. AlGaN devices and growth of device structures

3. Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon

4. Sixteen years GaN on Si

5. Epitaxial challenges of GaN on silicon

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