Strain measurement for the semiconductor industry with nm-scale resolution by dark field electron holography and nanobeam electron diffraction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/326/i=1/a=012025/pdf
Reference5 articles.
1. Nanoscale holographic interferometry for strain measurements in electronic devices
2. Strain characterization in SOI and strained-Si on SGOI MOSFET channel using nano-beam electron diffraction (NBD)
3. Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution
4. Improved precision in strain measurement using nanobeam electron diffraction
5. Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation;Ultramicroscopy;2018-01
2. Investigation of deformations and strain fields in silicon matrix structures embedded with vertically stacked Ge(Si) self-assembled islands;Applied Physics Letters;2014-10-20
3. Determination of the surface morphology of gold-decahedra nanoparticles using an off-axis electron holography dual-lens imaging system;Micron;2013-11
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