Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation-Reference-Cited by-同舟云学术

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Quantitative HAADF STEM of SiGe in presence of amorphous surface layers from FIB preparation

Published:2018-01 Issue: Volume:184 Page:29-36
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Grieb Tim,Tewes Moritz,Schowalter Marco,Müller-Caspary Knut,Krause Florian F.,Mehrtens Thorsten,Hartmann Jean-Michel,Rosenauer Andreas

Funder

DFG

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. MULTEM: a new multislice program to perform accurate and fast electron diffraction and imaging simulations using graphics processing units with CUDA;Lobato;Ultramicroscopy,2015

2. STEMsalabim: a high-performance computing cluster friendly code for scanning transmission electron microscopy image simulations of thin specimens;Oelerich;Ultramicroscopy,2017

3. STEMSIM - a new software tool for simulation of STEM HAADF Z-contrast imaging;Rosenauer;Springer Proc. Phys.,2007

4. GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient;Döscher;J Cryst Growth,2017

5. Quantitative strain and compositional studies of InxGa1−xAs epilayer in a GaAs-based pHEMT device structure by TEM techniques;Rao;Microsc. Microanal.,2014

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