Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/193/i=1/a=012084/pdf
Reference13 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect
3. Role of dynamical screening in excitation kinetics of biased quantum wells: Nonlinear absorption and ultrabroadband terahertz emission
4. Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation
5. Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
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2. Terahertz Time-Domain Spectroscopy (THz-TDS) of LED Heterostructures with Three and Five InxGa1 – xN/GaN Quantum Wells;Journal of Experimental and Theoretical Physics;2023-05
3. Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation;International Journal of Optics;2023-02-06
4. Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy;physica status solidi (c);2016-02-03
5. Terahertz electromodulation spectroscopy of electron transport in GaN;Applied Physics Letters;2015-03-02
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