Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy-Reference-Cited by-同舟云学术

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Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy

Published:2016-02-03 Issue:5-6 Volume:13 Page:252-255
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi C

Author:

Dunn Aniela,Spencer Ben F.,Hardman Samantha J. O.,Graham Darren M.,Hammersley Simon,Davies Matthew J.,Dawson Phil,Kappers Menno J.,Oliver Rachel A.,Humphreys Colin J.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells;ACS Photonics;2023-07-19

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