Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation-Reference-Cited by-同舟云学术

Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

Published:2023-02-06 Issue: Volume:2023 Page:1-10
ISSN:1687-9392
Container-title:International Journal of Optics
language:en
Short-container-title:International Journal of Optics

Author:

Saleem Muhammad Farooq¹^ORCID,Ashraf Ghulam Abbas²^ORCID,Iqbal Muhammad Faisal³^ORCID,Khan Rashid⁴^ORCID,Javid Muhammad⁵^ORCID,Wang Tianwu¹^ORCID

Affiliation:

1. GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510530, China

2. Department of Physics, Zhejiang Normal University, Jinhua 321004, Zhejiang, China

3. Department of Physics, Riphah International University, Faisalabad 38000, Pakistan

4. Zhejiang Provincial Key Laboratory of Advanced Chemical Engineering Manufacture Technology, College of Chemical and Biological Engineering, Zhejiang University, Hangzhou 310027, China

5. Institute of Advanced Magnetic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China

Abstract

InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.

Funder

National Natural Science Foundation of China

Publisher

Hindawi Limited

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://downloads.hindawi.com/journals/ijo/2023/5619799.pdf

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