Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
2. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
3. Recombination dynamics of localized excitons inIn0.20Ga0.80N-In0.05Ga0.95N multiple quantum wells
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Reduction of oscillator strength due to piezoelectric fields inGaN/AlxGa1−xNquantum wells
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1. Optical characterization by photoreflectance of GaN after its partial thermal decomposition;Optik;2021-12
2. Correlated terahertz acoustic and electromagnetic emission in dynamically screened InGaN/GaN quantum wells;Physical Review B;2011-08-26
3. Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells observed by transient THz spectroscopy;SPIE Proceedings;2010-02-11
4. Terahertz study of ultrafast carrier dynamics in InGaN/GaN multiple quantum wells;Journal of Physics: Conference Series;2009-11-01
5. Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al x Ga 1− x N/GaN/Al y Ga 1− y N Quantum Well;Communications in Theoretical Physics;2007-02
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