Terahertz electromodulation spectroscopy of electron transport in GaN-Reference-Cited by-同舟云学术

Terahertz electromodulation spectroscopy of electron transport in GaN

Published:2015-03-02 Issue:9 Volume:106 Page:092107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Engelbrecht S. G.¹,Arend T. R.¹,Zhu T.²^ORCID,Kappers M. J.²,Kersting R.¹

Affiliation:

1. Photonics and Optoelectronics Group, Physics Department and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität, Amalienstr. 54, 80799 München, Germany

2. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, United Kingdom

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4914326

Reference29 articles.

1. Verifying the Drude response

2. Optical and electronic properties of doped silicon from 0.1 to 2 THz

3. Carrier dynamics of electrons and holes in moderately doped silicon

4. Terahertz studies of carrier dynamics and dielectric response of n-type, freestanding epitaxial GaN

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electro-optical modulation of terahertz beam by drifting space-charge domains in n-GaN epilayers;Journal of Applied Physics;2023-05-23

2. Terahertz Electromodulation Spectroscopy for Characterizing Electronic Transport in Organic Semiconductor Thin Films;Journal of Infrared, Millimeter, and Terahertz Waves;2022-12-26

3. Field-induced migration of gold in molecular semiconductors;Applied Physics Letters;2022-06-13

4. Noncontact Characterization Techniques of GaN-Based Terahertz Devices;Lecture Notes in Electrical Engineering;2021

5. Terahertz conductivity of the highly mismatched amorphous alloy, GaNBi;Semiconductor Science and Technology;2017-10-31