Surface Passivation of Ti/4H-SiC Schottky Barrier Diode
Author:
Publisher
IOP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://iopscience.iop.org/article/10.1088/0253-6102/58/4/23/pdf
Reference31 articles.
1. Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs
2. SiC Devices for Renewable and High Performance Power Conversion Applications
3. Temperature-Dependent Characteristics of SiC Devices: Performance Evaluation and Loss Calculation
4. Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts;Japanese Journal of Applied Physics;2015-12-11
2. Investigation of Thickness Dependence of Metal Layer in Al/Mo/4H–SiC Schottky Barrier Diodes;Journal of Nanoscience and Nanotechnology;2015-11-01
3. On the anomalous peak in the forward bias capacitance and conduction mechanism in the Au/n-4H SiC (MS) Schottky diodes (SDs) in the temperature range of 140–400 K;International Journal of Modern Physics B;2015-02-10
4. TCAD simulation for alpha-particle spectroscopy using SIC Schottky diode;Radiation Protection Dosimetry;2015-01-28
5. On the negative capacitance behavior in the forward bias of Au/n–4H–SiC (MS) and comparison between MS and Au/TiO2/n–4H–SiC (MIS) type diodes both in dark and under 200 W illumination intensity;International Journal of Modern Physics B;2014-12-18
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