SiC Devices for Renewable and High Performance Power Conversion Applications-Reference-Cited by-同舟云学术

SiC Devices for Renewable and High Performance Power Conversion Applications

Published:2012-03-26 Issue: Volume:2012 Page:1-5
ISSN:2090-181X
Container-title:Advances in Power Electronics
language:en
Short-container-title:Advances in Power Electronics

Author:

Abuishmais Ibrahim¹,Undeland Tore M.¹

Affiliation:

1. Department of Electric Power Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway

Abstract

The unique properties of SiC devices enable substantial improvement of existing power conversion systems. SiC devices offer lower conduction and switching losses which increases converter efficiency. With high switching speed ability, employing SiC is expected to reduce weight and cost of conversion systems. This paper investigates the potential impact of SiC devices on renewable energy applications.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering

Link

http://downloads.hindawi.com/archive/2012/765619.pdf

Reference11 articles.

1. Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth

2. High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

3. High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances

4. Static and dynamic characterization of large-area high-current-density SiC Schottky diodes

5. SiC power Schottky and PiN diodes

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