Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study

Author:

Kumar Kundan1,Bertoluzzo Manuele2ORCID,Buja Giuseppe2ORCID,Ortenzi Fernando3

Affiliation:

1. Department of Electrical Engineering, Bengal College of Engineering & Technology, Bidhannagar, Durgapur 713212, India

2. Department of Industrial Engineering, University of Padova, Via Gradenigo 6a, 35131 Padova, Italy

3. ENEA-Italian Agency for New Technologies, Energy and Sustainable Economic Development, DTE-PCU-STMA Laboratory, Casaccia Research Center, Via Anguillarese 301, S.M. Galeria, 00123 Roma, Italy

Abstract

One of the emerging research topics in the propulsion drive of the electric vehicles is the improvement in the efficiency of its component parts, namely, the propulsion motor and the associated inverter. This paper is focused on the efficiency of the inverter and analyzes the improvement that follows from the replacement of the silicon (Si) IGBT devices with silicon carbide (SiC) MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the working torque-speed plane of the propulsion motor. Then, a proper model of the power losses in the inverter over a supply period of the motor is formulated for the two types of device, including the integrated freewheeling diode. By putting together the voltage-current solicitations and the device power losses, the efficiency maps of the Si IGBT and SiC MOSFET inverters are calculated and compared over the torque-speed plane. The results for the Si IGBT inverter are supported by measurements executed on a marketed C-segment compact electric car, while the SiC MOSFET loss model is validated by an on-purpose built test bench. Finally, the overall efficiency of the propulsion drive is calculated by accounting for the motor efficiency. Main outcomes of the paper is a quantitative evaluation of both the improvement in the efficiency achievable with the SiC MOSFETs and the ensuing increase in the electric car range.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Hysteresis Amplifier Model to Eliminate Multi-switching on IGBT Work;2023 10th International Conference on Electrical Engineering, Computer Science and Informatics (EECSI);2023-09-20

2. LTspice Simulation Analysis for Loss Estimation of GaN MOSFET based Class E Resonant Inverter;2022 IEEE Global Conference on Computing, Power and Communication Technologies (GlobConPT);2022-09-23

3. A High Efficiency Transmission Architecture for Electric Vehicles;SAE Technical Paper Series;2022-03-29

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