Temperature-dependent characteristics of 4H—SiC junction barrier Schottky diodes
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference16 articles.
1. Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers
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1. Direct observation of three-dimensional transient temperature distribution in SiC Schottky barrier diode under operation by optical-interference contactless thermometry imaging;Applied Physics Express;2022-01-25
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3. Effect of Au/Ni/4H–SiC Schottky junction thermal stability on performance of alpha particle detection;Chinese Physics B;2018-08
4. The effects of electron irradiation and thermal dependence measurements on 4H-SiC Schottky diode;Semiconductors;2017-12
5. Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts;Japanese Journal of Applied Physics;2015-12-11
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