Temperature-Dependent Characteristics of SiC Devices: Performance Evaluation and Loss Calculation-Reference-Cited by-同舟云学术

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Temperature-Dependent Characteristics of SiC Devices: Performance Evaluation and Loss Calculation

Published:2012-02 Issue:2 Volume:27 Page:1013-1024
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Dong Jiang ,Burgos R.,Fei Wang ,Boroyevich D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/6112283/05887424.pdf?arnumber=5887424

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. A Variable Switching Frequency Space Vector Pulsewidth Modulation Technique Using Virtual Flux Ripple;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-04

5. Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection;Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering;2022-10-21

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