Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts-Reference-Cited by-同舟云学术

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Effects of sputtering power Schottky metal layers on rectifying performance of Mo–SiC Schottky contacts

Published:2015-12-11 Issue:1S Volume:55 Page:01AC05
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Seula,Lee Jinseon,You Sslimsearom,Kyoung Sinsu,Kim Kyung Hwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference24 articles.

1. SiC power-switching devices-the second electronics revolution?

2. Surface Passivation of Ti/4H-SiC Schottky Barrier Diode

3. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow;IEEE Transactions on Electron Devices;2023-08

2. Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes;Japanese Journal of Applied Physics;2017-11-15

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