Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes-Reference-Cited by-同舟云学术

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Effect of trench structure on reverse characteristics of 4H-SiC junction barrier Schottky diodes

Published:2017-11-15 Issue:12 Volume:56 Page:121301
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Konishi Kumiko,Kameshiro Norifumi,Yokoyama Natsuki,Shima Akio,Shimamoto Yasuhiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=12/a=121301/pdf

Reference29 articles.

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

2. Material science and device physics in SiC technology for high-voltage power devices

3. Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

4. Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advanced Vertical Diamond Diodes with Trench Structure towards High Performances;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

2. High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure;Chinese Physics B;2023-07-01

3. Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling;Electronics;2022-06-24

4. A SiC sidewall enhanced trench JBS diode with improved forward performance;Semiconductor Science and Technology;2022-05-24

5. An ultrahigh-voltage 4H-SiC merged PiN Schottky diode with three-dimensional p-type buried layers;Journal of Central South University;2021-12

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