Ion energy and angular distributions into the wafer–focus ring gap in capacitively coupled discharges
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=6/a=062004/pdf
Reference6 articles.
1. Plasma sheath electric field strengths above a grooved electrode in a parallel-plate radio-frequency discharge
2. Cleaning of wafer edge, bevel and back-side with a torus-shaped capacitively coupled plasma
3. Plasma molding over surface topography: Simulation of ion flow, and energy and angular distributions over steps in RF high-density plasmas
4. Plasma molding over surface topography: simulation and measurement of ion fluxes, energies and angular distributions over trenches in RF high density plasmas
5. Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas
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1. Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors;Journal of Vacuum Science & Technology A;2023-07-27
2. Effect of focus ring with external circuit on cathode edge sheath dynamics in a capacitively coupled plasma;Journal of Vacuum Science & Technology A;2023-04-20
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4. Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies;Japanese Journal of Applied Physics;2022-11-30
5. Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma;Nanomaterials;2022-11-10
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