Penetration of plasma into the wafer-focus ring gap in capacitively coupled plasmas
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2736333
Reference30 articles.
1. Cleaning of wafer edge, bevel and back-side with a torus-shaped capacitively coupled plasma
2. Plasma sheath electric field strengths above a grooved electrode in a parallel-plate radio-frequency discharge
3. Plasma molding over surface topography: Simulation of ion flow, and energy and angular distributions over steps in RF high-density plasmas
4. Plasma molding over surface topography: simulation and measurement of ion fluxes, energies and angular distributions over trenches in RF high density plasmas
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2. Effects of the focus ring on the ion kinetics at the wafer edge in capacitively coupled plasma reactors;Journal of Vacuum Science & Technology A;2023-07-27
3. Effect of focus ring with external circuit on cathode edge sheath dynamics in a capacitively coupled plasma;Journal of Vacuum Science & Technology A;2023-04-20
4. Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies;Japanese Journal of Applied Physics;2022-11-30
5. Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma;Nanomaterials;2022-11-10
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