The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer-Reference-Cited by-同舟云学术

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The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer

Published:2008-04-04 Issue:9 Volume:41 Page:094003
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Wang T,Lee K B,Bai J,Parbrook P J,Ranalli F,Wang Q,Airey R J,Cullis A G,Zhang H X,Massoubre D,Gong Z,Watson I M,Gu E,Dawson M D

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/41/i=9/a=094003/pdf

Reference25 articles.

1. Tailored UV-laser source for fluorescence spectroscopy of biomolecules

2. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm

3. Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN

4. Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of AlN based materials grown on nano-patterned sapphire substrates for deep ultraviolet LED applications;Japanese Journal of Applied Physics;2019-04-17

2. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer;Optics Express;2018-02-20

3. Fabrication and whispering gallery resonance of self-rolled up gallium nitride microcavities;Thin Solid Films;2017-04

4. Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes;Nanotechnology;2013-07-30

5. Enhanced ultraviolet emission in photoluminescence of GaN film covered by ZnO nanoflakes;Journal of Luminescence;2013-02

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