Study of AlN based materials grown on nano-patterned sapphire substrates for deep ultraviolet LED applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/58/i=SC/a=SC1007/pdf
Reference33 articles.
1. Recent Progress in AlGaN-Based Deep-UV LEDs
2. Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy
3. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
4. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
5. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
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1. High quality AlN film assisted by graphene/sputtered AlN buffer layer for deep-ultraviolet-LED;Nanotechnology;2023-05-09
2. Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping;Nanomaterials;2022-12-06
3. Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation;Advanced Functional Materials;2022-11-14
4. Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers;Nanomaterials;2022-11-08
5. Physical and technological analysis of the AlGaN-based UVC-LED: an extended discussion focused on cubic phase as an alternative for surface disinfection.;Revista Mexicana de Física;2022-02-09
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