282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates-Reference-Cited by-同舟云学术

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Published:2013-06-17 Issue:24 Volume:102 Page:241113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dong Peng,Yan Jianchang,Wang Junxi,Zhang Yun,Geng Chong,Wei Tongbo,Cong Peipei,Zhang Yiyun,Zeng Jianping,Tian Yingdong,Sun Lili,Yan Qingfeng,Li Jinmin,Fan Shunfei,Qin Zhixin

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4812237

Reference23 articles.

1. Deep-Ultraviolet Light-Emitting Diodes

2. Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

3. Epitaxial lateral overgrowth of AlN on trench-patterned AlN layers

4. Growth and applications of Group III-nitrides

5. Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

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