Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Effect of oxygen species on the positive flat-band voltage shift in Al2O3/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Published:2013-03-18 Issue:15 Volume:46 Page:155101
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Kang Hee-Sung,Siva Pratap Reddy M,Kim Dong-Seok,Kim Ki-Won,Ha Jong-Bong,Lee Yong Soo,Choi Hyun-Chul,Lee Jung-Hee

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/46/i=15/a=155101/pdf

Reference34 articles.

1. SiC and GaN High-Voltage Power Devices

2. Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

3. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

4. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

5. Normally-off GaN-MISFET with well-controlled threshold voltage

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor;Applied Physics Letters;2024-07-08

2. Post-annealing effect of low temperature atomic layer deposited Al₂O₃ on the top gate IGZO TFT;Nanotechnology;2024-01-25

3. Impact of post-deposition annealing on the electronic properties of Al2O3/GaN interface by first-principles study;Surfaces and Interfaces;2024-01

4. Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first principle-based study;Solid State Communications;2023-10

5. Modification of interface properties of Au/n-GaN Schottky junction by rare-earth oxide Nd2O3 as an interlayer and its microstructural characterization;Vacuum;2023-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3