Author:
Kuraguchi Masahiko,Takada Yoshiharu,Suzuki Takashi,Hirose Mayumi,Tsuda Kunio,Saito Wataru,Saito Yasunobu,Omura Ichiro
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference6 articles.
1. Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
2. High transconductance enhancement-mode AlGaN∕GaN HEMTs on SiC substrate
3. T. Kawasaki, K. Nakata, and S. Yaegassi, Int. Conf. Solid State Devices and Materials (2005).
4. High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
5. M. Kuraguchi, Y. Takada, W. Saito, T. Suzuki, M. Hirose, N. Saito, I. Omura, and K. Tsuda, 53rd Spring Meeting Japan Society of Applied Physics and Related Societies (2006).
Cited by
21 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献