Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer-Reference-Cited by-同舟云学术

Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer

Published:2008-04-25 Issue:4 Volume:47 Page:2824-2827
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Hwa-Chul,Hyun Sun-Young,Cho Hyun-Ick,Ostermaier Clemens,Kim Ki-Won,Ahn Sang-Il,Na Kyoung-Il,Ha Jong-Bong,Kwon Dae-Hyuk,Hahn Cheol-Koo,Hahm Sung-Ho,Choi Hyun-Chul,Lee Jung-Hee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference9 articles.

1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

2. High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contacts

3. AlGaN/GaN high electron mobility transistors with InGaN back-barriers

4. AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer

5. Nitride-based HFETs with carrier confinement layers

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