Ohmic contact in monolayer InSe-metal interface-Reference-Cited by-同舟云学术

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Ohmic contact in monolayer InSe-metal interface

Published:2017-06-09 Issue:2 Volume:4 Page:025116
ISSN:2053-1583
Container-title:2D Materials
language:
Short-container-title:2D Mater.

Author:

Jin Hao,Li Jianwei,Wan Langhui,Dai Ying,Wei Yadong,Guo Hong

Funder

Taishan Scholar Program of Shandong

Natural Science Foundation of SZU

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://iopscience.iop.org/article/10.1088/2053-1583/aa75eb/pdf

Reference37 articles.

1. Electrical contacts to one- and two-dimensional nanomaterials

2. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

3. Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

4. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

5. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

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2. Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi₂N₄ (X = Mo, W) Monolayers;Langmuir;2024-04-09

3. Efficient Modulation of Schottky to Ohmic Contact in MoSi₂N₄/M₃C₂ (M = Zn, Cd, Hg) van der Waals Heterostructures;The Journal of Physical Chemistry Letters;2024-04-01

4. Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄–Metal Contacts;ACS Applied Electronic Materials;2024-03-01

5. Alleviation of Schottky barrier heights at TMDs/metal interfaces with a tunneling layer of semiconducting InSe nanoflake;Applied Surface Science;2023-11

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