Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi<sub>2</sub>N<sub>4</sub> (X = Mo, W) Monolayers-Reference-Cited by-同舟云学术

Computational Insights into Schottky Barrier Heights: Graphene and Borophene Interfaces with H- and H́-XSi₂N₄ (X = Mo, W) Monolayers

Published:2024-04-09 Issue:16 Volume:40 Page:8463-8473
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Jalil Abdul¹^ORCID,Zhao Tingkai¹^ORCID,Firdous Ammara²,Kanwal Arooba²,Ali Raza Syed Raza²,Rafiq Aftab³

Affiliation:

1. NPU-NCP Joint International Research Center on Advanced Nanomaterials & Defects Engineering, Shaanxi Engineering Laboratory for Graphene New Carbon Materials and Applications, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China

2. Department of Physics, Allama Iqbal Open University, Sector H-8, Islamabad 44000, Pakistan

3. Department of Physics and Applied Mathematics, Pakistan Institute of Engineering and Applied Sciences, Lehtrar Road, Islamabad 44000, Pakistan

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.langmuir.3c04045

Reference84 articles.

1. Electronics based on two-dimensional materials

2. Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide

3. A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

4. Two-dimensional heterostructures for energy storage

5. Two-dimensional material nanophotonics

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