Efficient Modulation of Schottky to Ohmic Contact in MoSi<sub>2</sub>N<sub>4</sub>/M<sub>3</sub>C<sub>2</sub> (M = Zn, Cd, Hg) van der Waals Heterostructures-Reference-Cited by-同舟云学术

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Efficient Modulation of Schottky to Ohmic Contact in MoSi₂N₄/M₃C₂ (M = Zn, Cd, Hg) van der Waals Heterostructures

Published:2024-04-01 Issue:14 Volume:15 Page:3871-3883
ISSN:1948-7185
Container-title:The Journal of Physical Chemistry Letters
language:en
Short-container-title:J. Phys. Chem. Lett.

Author:

Wei Xinru¹^ORCID,Zhang Minjie¹,Zhang Xiaodong¹,Lin Yanming¹,Jiang Zhenyi¹^ORCID,Du Aijun²^ORCID

Affiliation:

1. Shaanxi Key Laboratory for Theoretical Physics Frontiers, Institute of Modern Physics, Northwest University, Xi’an 710127, P. R. China

2. School of Chemistry and Physics, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4000, Australia

Funder

Northwest University

Education Department of Shaanxi Province

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpclett.4c00501

Reference78 articles.

1. Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

2. Electrical contacts to two-dimensional semiconductors

3. Interfacial Electronic and Photovoltaic Performance of a Novel Lead‐Free Z‐Scheme CsSnBr ₃ /MoSe ₂ Perovskite Heterostructure: A Theoretical and Experimental Study

4. Interfacial electronic and vacancy defect engineering coupling of the Z-scheme CsSnBr₃/SnS₂ heterostructure for photovoltaic performance: a hybrid DFT study

5. Ultrasensitive photodetectors based on monolayer MoS2

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1. sp2 to sp3 hybridization transformation in 2D metal-semiconductor contact interface suppresses tunneling barrier and Fermi level pinning simultaneously;Nano Research;2024-08-01

2. Resistor-to-Schottky barrier analytical model for ohmic contact test structures;Semiconductor Science and Technology;2024-05-21

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