Interfacial electronic and vacancy defect engineering coupling of the Z-scheme CsSnBr<sub>3</sub>/SnS<sub>2</sub> heterostructure for photovoltaic performance: a hybrid DFT study-Reference-Cited by-同舟云学术

Interfacial electronic and vacancy defect engineering coupling of the Z-scheme CsSnBr₃/SnS₂ heterostructure for photovoltaic performance: a hybrid DFT study

Published:2023 Issue:9 Volume:11 Page:4758-4768
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhang Minjie¹^ORCID,Lin Yanming¹^ORCID,Li Jiayi¹,Wei Xinru¹,Peng Ying¹,Wang Zhengkun¹,Maheskumar V.¹,Jiang Zhenyi¹^ORCID,Du Aijun²^ORCID

Affiliation:

1. Shaanxi Key Laboratory for TheoreticalPhysics Frontiers, Institute of Modern Physics, Northwest University, Xi'an 710069, P. R. China

2. School of Chemistry and Physics, Queensland University of Technology, Gardens Point Campus, Brisbane, QLD 4000, Australia

Abstract

Interfacial coupling of Z-scheme CsSnBr3/SnS2 heterostructure induces a narrowing band gap and reduces carrier recombination rate. Coupling interface and Br vacancy defects of CsSnBr3 has excellent photovoltaic performance.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shaanxi Province

Education Department of Shaanxi Province

Northwest University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TA/D2TA09170D

Reference60 articles.