Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe<sub>2</sub>P<sub>4</sub>

Ultralow Contact Resistance and Efficient Ohmic Contacts in MoGe₂P₄–Metal Contacts

Published:2024-03-01 Issue:3 Volume:6 Page:2019-2025
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Huang Zhipeng¹,Hu Xiaohui¹²^ORCID,Xu Tao³^ORCID,Sun Litao³^ORCID

Affiliation:

1. College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, China

2. Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, China

3. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, China

Funder

Jiangsu Planned Projects for Postdoctoral Research Funds

National Key Research and Development Program of China

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Priority Academic Program Development of Jiangsu Higher Education Institutions

Key Laboratory of MEMS of Ministry of Education, Southeast University

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.4c00069

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1. Promises and prospects of two-dimensional transistors

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3. Ultralow contact resistance between semimetal and monolayer semiconductors

4. Capturing 2D van der Waals magnets with high probability for experimental demonstration from materials science literature

5. Transistors based on two-dimensional materials for future integrated circuits