Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, CO 80401, USA.
2. Beijing Computational Science Research Center, Beijing 100094, China.
Abstract
Funder
U.S. Department of Energy
Office of Energy Efficiency and Renewable Energy
Office of Science
Publisher
American Association for the Advancement of Science (AAAS)
Subject
Multidisciplinary
Reference54 articles.
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5. Two-dimensional flexible nanoelectronics
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