The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence-Reference-Cited by-同舟云学术

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The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

Published:2006-08-17 Issue: Volume:T126 Page:110-114
ISSN:0031-8949
Container-title:Physica Scripta
language:
Short-container-title:Phys. Scr.

Author:

Selvig E,Myrvågnes G,Bugge R,Haakenaasen R,Fimland B O

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

Link

http://stacks.iop.org/1402-4896/2006/i=T126/a=025/pdf

Reference23 articles.

1. Antimonide-based strained quantum-well diode lasers

2. High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm

3. Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5μm laser structures on GaSb substrates

4. Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures

5. Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells;Journal of Applied Physics;2014-10-21

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