Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation-Reference-Cited by-同舟云学术

Growth and layer structure optimization of 2.26μm (AlGaIn)(AsSb) diode lasers for room temperature operation

Published:2001-07 Issue: Volume:227-228 Page:595-599
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Simanowski S,Mermelstein C,Walther M,Herres N,Kiefer R,Rattunde M,Schmitz J,Wagner J,Weimann G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. G.W. Turner, H.K. Choi, in: M.O. Manasreh (Ed.), Optoelectronic Properties of Semiconductors and Superlattices, Vol. 3, Gordon and Breach, New York, 1997.

2. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

3. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

4. Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5μm laser structures on GaSb substrates

5. Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures

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