Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5μm laser structures on GaSb substrates-Reference-Cited by-同舟云学术

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Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0–2.5μm laser structures on GaSb substrates

Published:1999-05 Issue: Volume:201-202 Page:849-853
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Simanowski S,Walther M,Schmitz J,Kiefer R,Herres N,Fuchs F,Maier M,Mermelstein C,Wagner J,Weimann G

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density

2. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

3. Low-Loss, Broadened-Waveguide, High-Power 2-μm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers

4. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm

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1. High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer;Applied Sciences;2023-04-28

2. Anodic fluoride passivation ofInAs/GaSb superlattice for mid-/short-wavelength dual-color infrared detector;Seventh Symposium on Novel Photoelectronic Detection Technology and Applications;2021-03-12

3. Interband cascade Lasers with AlGaAsSb cladding layers emitting at 33 µm;Optics Express;2019-10-15

4. Anodic fluoride passivation of type II InAs/GaSb superlattice for short-wavelength infrared detector;Applied Physics A;2014-09-10

5. Passivation of InAs/GaSb type II superlattice photodiodes;Applied Physics A;2014-04-24

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