Anodic fluoride passivation of type II InAs/GaSb superlattice for short-wavelength infrared detector-Reference-Cited by-同舟云学术

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Anodic fluoride passivation of type II InAs/GaSb superlattice for short-wavelength infrared detector

Published:2014-09-10 Issue:2 Volume:118 Page:547-551
ISSN:0947-8396
Container-title:Applied Physics A
language:en
Short-container-title:Appl. Phys. A

Author:

Zhang Li Xue,Sun Wei Guo,Lv Yan Qiu,Li Mo,Ding Jia Xin,Si Jun Jie

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s00339-014-8754-z.pdf

Reference21 articles.

1. H. Kroemer, Phys. E 20(3–4), 196–203 (2004)

2. G.A. Sai-Halasz, R. Tsu, L. Esaki, Appl. Phys. Lett. 30, 651 (1977)

3. D.L. Smith, C. Mailhiot, J. Appl. Phys. 62, 2545 (1987)

4. M.J. Yang, B.R. Bennett, Electron. Lett. 30(20), 1710–1711 (1994)

5. K. Banerjee, S. Ghosh, S. Mallick, E. Plis, S. Krishna, J. Electron. Mater. 38(9), 1944–1947 (2009)

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1. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors;IEEE Transactions on Electron Devices;2023-11

2. Reduction of surface leakage current of InAs/GaSb long-wavelength superlattice detectors using SiO2 and anodic sulfide composite passivation;Materials Science in Semiconductor Processing;2023-09

3. Anodic fluoride passivation ofInAs/GaSb superlattice for mid-/short-wavelength dual-color infrared detector;Seventh Symposium on Novel Photoelectronic Detection Technology and Applications;2021-03-12

4. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

5. MOCVD growth of InAs/GaSb type-II superlattices on InAs substrates for short wavelength infrared detection;Infrared Physics & Technology;2020-03

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