Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors-Reference-Cited by-同舟云学术

Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors

Published:2023-11 Issue:11 Volume:70 Page:5517-5527
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xiaohua¹^ORCID,Li Jingzhen²,Yan Yong¹,Zhang Meiyu²,Wen Tao³,Liu Ming³,Yu Songlin³,Zhang Yongzhe¹^ORCID

Affiliation:

1. Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing, China

2. Key Laboratory of Optoelectronics Technology of Education Ministry of China, Faculty of Information Technology, and the Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing, China

3. North China Research Institute of Electro-Optics, Beijing, China

Funder

Beijing Chaoyang District Postdoctoral Work funding project

Science and Technology on Vacuum Technology and Physics Laboratory funding project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10255728.pdf?arnumber=10255728

Reference82 articles.

1. Robust Evaluation of Long-Term Stability of an InAs/GaSb Type II Superlattice Midwave Infrared Focal Plane Array

2. Atomic layer deposited passivation layers for superlattice photodetectors

3. Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

4. Atomic layer deposited Al2O3 passivation of type II InAs/GaSb superlattice photodetectors

5. High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al2O3 passivation;Vacuum;2024-06

2. Effect of “M” and “B” superlattice barrier layers on dark current of long-wavelength infrared detectors;Materials Science in Semiconductor Processing;2024-04