Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3–2.7μm laser structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
2. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
3. Low-Loss, Broadened-Waveguide, High-Power 2-μm AlGaAsSb/InGaAsSb/GaSb Separate Confinement Quantum-Well Lasers
4. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
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2. Quantifying Auger recombination coefficients in type-I mid-infrared InGaAsSb quantum well lasers;Journal of Physics D: Applied Physics;2020-11-11
3. Next-generation mid-infrared sources;Journal of Optics;2017-11-14
4. Effect of strain on band alignment of GaAsSb/GaAs quantum wells;Journal of Applied Physics;2017-07-28
5. Study of molecular beam epitaxially grown InGaAsSbN/GaSb single quantum wells;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
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