Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Highly reliable nitride-based LEDs with SPS+ITO upper contacts
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1. MBE-grown AlN-on-Si with improved crystalline quality by using silicon-on-insulator substrates;Applied Physics Express;2014-05-29
2. Influence of double AlN buffer layers on the qualities of GaN films prepared by metal—organic chemical vapour deposition;Chinese Physics B;2012-12
3. Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy;Chinese Physics Letters;2011-06
4. Comprehensive Survey for the Frontier Disciplines;Acta Physica Sinica;2011
5. Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy;Chinese Physics B;2010-11
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