Effects of AlN nucleation layer thickness on crystal quality of AlN grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference17 articles.
1. Remarkable enhancement of 254-280 nm deep ultraviolet emission from AlGaN quantum wells by using high-quality AlN buffer on sapphire
2. AlN avalanche photodetectors
3. Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures
4. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE
5. Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy
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1. Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition;Crystals;2024-04-16
2. Effect of H Plasma Treatment of the Nucleation Layer on AlN Epitaxy in Microwave Plasma Chemical Vapor Deposition;Crystal Growth & Design;2023-03-14
3. Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection;Crystal Growth & Design;2021-04-30
4. Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy;Applied Physics Letters;2020-04-13
5. Properties of AlN layers grown on c-sapphire substrate using ammonia assisted MBE;Journal of Crystal Growth;2018-10
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