Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection-Reference-Cited by-同舟云学术

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Author:

He Chenguang¹²^ORCID,Wu Hualong¹,Jia Chuanyu³,Zhang Kang¹,He Longfei¹,Wang Qiao¹,Li Junze⁴,Liu Ningyang¹,Zhang Shan⁵,Zhao Wei¹²,Chen Zhitao¹,Shen Bo⁶

Affiliation:

1. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China

2. Guangdong Guangyue Technology Co., Ltd., Foshan 528200, China

3. School of Electrical Engineering and Intelligentization, Dongguan University of Technology, Dongguan 523808, China

4. Microsystem & Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China

5. Research Center of Advanced Information Materials, School of Physics & Materials Science, Guangzhou University, Guangzhou 510006, China

6. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Guangdong Province

Guangdong Basic and Applied Basic Research Foundation

Guangdong Academy of Sciences

Foshan Science and Technology Innovation Project

Dongguan Core Technology Frontier Project

Guangzhou Basic and Applied Basic Research Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference39 articles.

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